SSD - Internal Hard Drives

• Available in 512GB, 1TB, 2TB
• PCIe 3.0 x 4 NVMe 1.3 Interface
• M.2 2280 Form Factor
• Up to 2100MB/s Read, 1700MB/s Write

• Available in 250 GB, 500 GB, 1 TB, 2 TB
• S.M.A.R.T | 256-bit AES
• PCIe 3.0 x 4 NVMe 1.3c Interface
• M.2 2280 Form Factor
• V-NAND 3-bit MLC
• Up to 2900MB/s Read, 1300MB/s Write

• Cache Memory Samsung 512MB Low Power DDR4 SDRAM
• Available in 250 GB, 500 GB, 1 TB, 2 TB
• S.M.A.R.T | 256-bit AES
• PCIe 4.0 x 4 NVMe 1.3c Interface
• M.2 2280 Form Factor
• V-NAND 3-bit MLC
• Up to 7000MB/s Read, 5000MB/s Write

• Capacity: 500GB
• Form Factor: M.2
• Compatibility: PCIe NVMe 3.0
• Reading speed:3000 MB / s
• Recording speed:1300 MB / s

• Capacity: 250GB
• Form Factor: M.2
• Compatibility: PCIe NVMe 3.0
• Reading speed:3000 MB / s
• Recording speed:1300 MB / s

• Capacity: 512GB
• M.2 NVMe PCIe Gen3 x 4 Interface
• Fast start-up, loading & file transfers.
• Compatible with all commonly used operating
• Including Windows, Linux, Dos, Unix, iOS & so on.
• Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

• Capacity: 256GB
• M.2 NVMe PCIe Gen3 x 4 Interface
• Fast start-up, loading & file transfers.
• Compatible with all commonly used operating
• Including Windows, Linux, Dos, Unix, iOS & so on.
• Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

• Capacity: 256GB
• Form Factor: M.2 2280
• Interface: M.2
• Connections: 1 x M.2 PCIe
• Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

• Capacity: 512GB
• Form Factor: M.2 2280
• Operating Voltage: 3.3V
• Interface: PCIe Gen3 ( 8Gb / s ), Up to 4 Lane
• Storage Media: 3D MLC/TLC NAND Flash
• Host Memory Buffer: Support
• Features: NCQ/S.M.A.R.T/Wear-Leveling
• Operating Temperature: 0 (32) - 70 (158)
• Item size: 8x2.2x0.2cm / 3.15x0.87x0.08in(L x W x H)

 PCIe Gen 3x4 NVMe Interface.
 3D TLC NAND Flash Memory.
 M.2 Next Generation Form Factor [NGFF].
 Available in 256GB, 512GB, 1TB, 2TB.
 MTBF (Mean Time between Failures): 1,500,000 hours.
 Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.
 M.2 2280 Form Factor.
 3D TLC NAND Flash Memory.
 SATA III 6Gb/s & SATA II 3 Gb/s.
 Available in 128GB, 256GB, 512GB, 1TB.
 Sequential Read, Write Speed (Up To): 550MB/s, 500 MB/s.
 MTBF (Mean Time between Failures): 1,500,000 hours.
 Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.
 M.2 2280 Form Factor.
 3D TLC NAND Flash Memory.
 Available in 128GB, 256GB, 512GB, 1TB.
 Sequential Read, Write Speed (Up To): 2100 MB/s, 1800 MB/s.
 MTBF (Mean Time between Failures): 1,500,000 hours.
 Operation Temperature: 0C to 70C.

>  Raise your performance expectations
>  Rest easy with solid reliability
>  Available in 250 GB, 500 GB, 1 TB, 2 TB
>  S.M.A.R.T. | 256-bit AES
>  PCIe 3.0 x4 NVMe 1.3 Interface
>  M.2 2280 Form Factor
>  Up to 3200MB/s Read, 1500MB/s Write
>  4K IOPS Read: 330000 | 4K IOPS Write: 300000

• Available in 512GB, 1TB, 2TB
• PCIe 3.0 x 4 NVMe 1.3 Interface
• M.2 2280 Form Factor
• Up to 2100MB/s Read, 1700MB/s Write

• Available in 512 GB, 1 TB
• PCIe 3 x 4 NVMe Interface
• M.2 2280 Form Factor
• 3D NAND
• Up to 3500MB/s Read, 2250MB/s Write

• Available in 512 GB, 1 TB
• PCIe 3 x 4 NVMe Interface
• M.2 2280 Form Factor
• 3D NAND
• Up to 3500MB/s Read, 2250MB/s Write

• Available in 250 GB, 500 GB, 1 TB, 2 TB
• S.M.A.R.T | 256-bit AES
• PCIe 3.0 x 4 NVMe 1.3c Interface
• M.2 2280 Form Factor
• V-NAND 3-bit MLC
• Up to 2900MB/s Read, 1300MB/s Write

• Cache Memory Samsung 512MB Low Power DDR4 SDRAM
• Available in 250 GB, 500 GB, 1 TB, 2 TB
• S.M.A.R.T | 256-bit AES
• PCIe 4.0 x 4 NVMe 1.3c Interface
• M.2 2280 Form Factor
• V-NAND 3-bit MLC
• Up to 7000MB/s Read, 5000MB/s Write

• Cache Memory Samsung 512MB Low Power DDR4 SDRAM
• Available in 250 GB, 500 GB, 1 TB, 2 TB
• S.M.A.R.T | 256-bit AES
• PCIe 4.0 x 4 NVMe 1.3c Interface
• M.2 2280 Form Factor
• V-NAND 3-bit MLC
• Up to 7000MB/s Read, 5000MB/s Write

• Capacity: 1TB
• Form Factor: M.2
• Compatibility: PCIe NVMe 3.0
• Reading speed:3000 MB / s
• Recording speed:1300 MB / s

• SATA III 6Gb/s
• Work Temperature: 0-70C.
• Available in Capacities 512GB, 1TB, 2TB
• MTBF (Mean Time between Failures): 1,000,000 hours.
• Sequential Read, Write Speed (Up To): 550MB/s, 520 MB/s.

• Capacity: 1TB
• M.2 NVMe PCIe Gen3 x 4 Interface
• Fast start-up, loading & file transfers.
• Compatible with all commonly used operating
• Including Windows, Linux, Dos, Unix, iOS & so on.
• Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

• SATA III 6Gb/s
• Work Temperature: 0-70C.
• Available in Capacities 512GB, 1TB, 2TB
• MTBF (Mean Time between Failures): 1,000,000 hours.
• Sequential Read, Write Speed (Up To): 550MB/s, 520 MB/s.

• Capacity: 1TB
• Form Factor: M.2 2280
• Interface: M.2
• Connections: 1 x M.2 PCIe
• Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

• Capacity: 480 GB
• Read speed (sequential): 560 MB/s
• Write speed (sequential): 520 MB/s
• Form factor: 2.5″
• Interface: SATA
• MTBF – 1.5e006 hours
• NAND flash technology – TLC

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• 3D TLC NAND Flash Memory.
• Available in 240GB, 480GB, 960GB, 1920GB, 4TB.
• Sequential Read, Write Speed (Up To): 3,100 MB/s, 1,050 MB/s
• MTBF (Mean Time between Failures): 1,800,000 hours.

>  10x faster than an HDD U3D NAND.
>  E100 is shock and vibration-resistant.
>  Fast start-up, loading, and file transfers 3D TLC (Tri-Level Cell). 
>  More reliable and durable than a hard drive.
>  Available in 120GB, 240GB, 512GB, 1024GB capacities.
>  A400 is designed to suit anyone's needs.
>  Ideal for desktops and notebooks.

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• 3D NAND Flash Memory.
• Available in 128GB, 256GB, 512GB, 1TB.
• Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s
• MTBF (Mean Time between Failures): 1,800,000 hours.

• SATA III 6Gb/s
• Work Temperature: 0-70C.
• Available in Capacities 120GB, 240GB, 480GB, 960GB 
• MTBF (Mean Time between Failures): 1,000,000 hours.
• Sequential Read, Write Speed (Up To): 530MB/s, 480 MB/s.

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• 3D NAND Flash Memory.
• Available in 128GB, 256GB, 512GB, 1TB.
• Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s
• MTBF (Mean Time between Failures): 1,800,000 hours.

• Capacity: 240 GB
• Read speed (sequential): 560 MB/s
• Write speed (sequential): 520 MB/s
• Form factor: 2.5″
• Interface: SATA
• MTBF – 1.5e006 hours
• NAND flash technology – TLC

 3D TLC NAND FLASH.
 Ultra-Fast Transmission.
 SATA III 6Gb/s & SATA II.
 Work Temperature: 0-70 .
 Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB
 MTBF (Mean Time between Failures): 2,000,000 hours.
 Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• Available in 250GB, 500GB, 1TB.
• Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s
• MTBF (Mean Time between Failures): 2,000,000 hours.

 3D TLC NAND FLASH.
 Ultra-Fast Transmission.
 SATA III 6Gb/s & SATA II.
 Work Temperature: 0-70 .
 Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB
 MTBF (Mean Time between Failures): 2,000,000 hours.
 Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• Available in 250GB, 500GB, 1TB.
• Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s
• MTBF (Mean Time between Failures): 2,000,000 hours.

 3D TLC NAND FLASH.
 Ultra-Fast Transmission.
 SATA III 6Gb/s & SATA II.
 Work Temperature: 0-70 .
 Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB
 MTBF (Mean Time between Failures): 2,000,000 hours.
 Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• Available in 250GB, 500GB, 1TB.
• Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s
• MTBF (Mean Time between Failures): 2,000,000 hours.

>  10x faster than an HDD U3D NAND.
>  E100 is shock and vibration-resistant.
>  Fast start-up, loading, and file transfers 3D TLC (Tri-Level Cell). 
>  More reliable and durable than a hard drive.
>  Available in 120GB, 240GB, 512GB, 1024GB capacities.
>  A400 is designed to suit anyone's needs.
>  Ideal for desktops and notebooks.

• PCIe Gen3×4 Interface.
• M.2 2280 Form Factor.
• 3D NAND Flash Memory.
• Available in 128GB, 256GB, 512GB, 1TB.
• Sequential Read, Write Speed (Up To): 1,500MB/s, 550 MB/s
• MTBF (Mean Time between Failures): 2,000,000 hours.

>  Faster boot-up, shutdown, application load and response.
>  Up to 20X faster than a typical hard disk drive.
>  Improves burst write performance, making it ideal for typical PC workloads.
>  Up to 535 MB/s Read, 445 MB/s Write.
>  Shock-resistant for proven durability, even if you drop your computer.
>  SATA III Interface | 2.5 Inches Form Factor.