SSD - Internal Hard Drives

Available in 512GB, 1TB, 2TB PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor Up to 2100MB/s Read, 1700MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Capacity: 500GB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

Capacity: 250GB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

Capacity: 512GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 256GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 256GB Form Factor: M.2 2280 Interface: M.2 Connections: 1 x M.2 PCIe Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

Capacity: 512GB Form Factor: M.2 2280 Operating Voltage: 3.3V Interface: PCIe Gen3 ( 8Gb / s ), Up to 4 Lane Storage Media: 3D MLC/TLC NAND Flash Host Memory Buffer: Support Features: NCQ/S.M.A.R.T/Wear-Leveling Operating Temperature: 0 (32) - 70 (158) Item size: 8x2.2x0.2cm / 3.15x0.87x0.08in(L x W x H)

 PCIe Gen 3x4 NVMe Interface.  3D TLC NAND Flash Memory.  M.2 Next Generation Form Factor [NGFF].  Available in 256GB, 512GB, 1TB, 2TB.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  SATA III 6Gb/s & SATA II 3 Gb/s.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 550MB/s, 500 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 2100 MB/s, 1800 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

>  Raise your performance expectations >  Rest easy with solid reliability >  Available in 250 GB, 500 GB, 1 TB, 2 TB >  S.M.A.R.T. | 256-bit AES >  PCIe 3.0 x4 NVMe 1.3 Interface >  M.2 2280 Form Factor >  Up to 3200MB/s Read, 1500MB/s Write >  4K IOPS Read: 330000 | 4K IOPS Write: 300000

Available in 512GB, 1TB, 2TB PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor Up to 2100MB/s Read, 1700MB/s Write

Available in 512 GB, 1 TB PCIe 3 x 4 NVMe Interface M.2 2280 Form Factor 3D NAND Up to 3500MB/s Read, 2250MB/s Write

Available in 512 GB, 1 TB PCIe 3 x 4 NVMe Interface M.2 2280 Form Factor 3D NAND Up to 3500MB/s Read, 2250MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Capacity: 1TB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

SATA III 6Gb/s Work Temperature: 0-70C. Available in Capacities 512GB, 1TB, 2TB MTBF (Mean Time between Failures): 1,000,000 hours. Sequential Read, Write Speed (Up To): 550MB/s, 520 MB/s.

Capacity: 1TB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

SATA III 6Gb/s Work Temperature: 0-70C. Available in Capacities 512GB, 1TB, 2TB MTBF (Mean Time between Failures): 1,000,000 hours. Sequential Read, Write Speed (Up To): 550MB/s, 520 MB/s.

Capacity: 1TB Form Factor: M.2 2280 Interface: M.2 Connections: 1 x M.2 PCIe Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

Capacity: 480 GB Read speed (sequential): 560 MB/s Write speed (sequential): 520 MB/s Form factor: 2.5″ Interface: SATA MTBF – 1.5e006 hours NAND flash technology – TLC

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D TLC NAND Flash Memory. Available in 240GB, 480GB, 960GB, 1920GB, 4TB. Sequential Read, Write Speed (Up To): 3,100 MB/s, 1,050 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

>  10x faster than an HDD U3D NAND. >  E100 is shock and vibration-resistant. >  Fast start-up, loading, and file transfers 3D TLC (Tri-Level Cell).  >  More reliable and durable than a hard drive. >  Available in 120GB, 240GB, 512GB, 1024GB capacities. >  A400 is designed to suit anyone's needs. >  Ideal for desktops and notebooks.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

SATA III 6Gb/s Work Temperature: 0-70C. Available in Capacities 120GB, 240GB, 480GB, 960GB  MTBF (Mean Time between Failures): 1,000,000 hours. Sequential Read, Write Speed (Up To): 530MB/s, 480 MB/s.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

Capacity: 240 GB Read speed (sequential): 560 MB/s Write speed (sequential): 520 MB/s Form factor: 2.5″ Interface: SATA MTBF – 1.5e006 hours NAND flash technology – TLC

 3D TLC NAND FLASH.  Ultra-Fast Transmission.  SATA III 6Gb/s & SATA II.  Work Temperature: 0-70 .  Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB  MTBF (Mean Time between Failures): 2,000,000 hours.  Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

 3D TLC NAND FLASH.  Ultra-Fast Transmission.  SATA III 6Gb/s & SATA II.  Work Temperature: 0-70 .  Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB  MTBF (Mean Time between Failures): 2,000,000 hours.  Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

 3D TLC NAND FLASH.  Ultra-Fast Transmission.  SATA III 6Gb/s & SATA II.  Work Temperature: 0-70 .  Available in Capacities 120GB, 240GB, 480GB, 960GB, 1920GB  MTBF (Mean Time between Failures): 2,000,000 hours.  Sequential Read, Write Speed (Up To): 560MB/s, 520 MB/s.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

>  10x faster than an HDD U3D NAND. >  E100 is shock and vibration-resistant. >  Fast start-up, loading, and file transfers 3D TLC (Tri-Level Cell).  >  More reliable and durable than a hard drive. >  Available in 120GB, 240GB, 512GB, 1024GB capacities. >  A400 is designed to suit anyone's needs. >  Ideal for desktops and notebooks.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1,500MB/s, 550 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

>  Faster boot-up, shutdown, application load and response. >  Up to 20X faster than a typical hard disk drive. >  Improves burst write performance, making it ideal for typical PC workloads. >  Up to 535 MB/s Read, 445 MB/s Write. >  Shock-resistant for proven durability, even if you drop your computer. >  SATA III Interface | 2.5 Inches Form Factor.