M.2 SATA SSDs

Available in 128GB, 256GB, 512GB SATA III 6Gb/s Interface M.2 2280 Form Factor Up to 500MB/s Read, 300MB/s Write

Available in 512GB, 1TB, 2TB PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor Up to 2100MB/s Read, 1700MB/s Write

Available in 128GB, 256GB, 512GB, 1TB, 2TB S.M.A.R.T PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor 3D Flash Up to 1500MB/s Read, 500MB/s Write

Available in 128GB, 256GB, 512GB, 1TB, 2TB S.M.A.R.T PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor 3D Flash Up to 1500MB/s Read, 500MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Capacity: 500GB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

Capacity: 250GB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

Capacity: 512GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 256GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 128GB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 256GB Form Factor: M.2 2280 Interface: M.2 Connections: 1 x M.2 PCIe Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

Capacity: 512GB Form Factor: M.2 2280 Operating Voltage: 3.3V Interface: PCIe Gen3 ( 8Gb / s ), Up to 4 Lane Storage Media: 3D MLC/TLC NAND Flash Host Memory Buffer: Support Features: NCQ/S.M.A.R.T/Wear-Leveling Operating Temperature: 0 (32) - 70 (158) Item size: 8x2.2x0.2cm / 3.15x0.87x0.08in(L x W x H)

Capacity: 256GB Form Factor: M.2 2280 Operating Voltage: 3.3V Interface: PCIe Gen3 ( 8Gb / s ), Up to 4 Lane Storage Media: 3D MLC/TLC NAND Flash Host Memory Buffer: Support Features: NCQ/S.M.A.R.T/Wear-Leveling Operating Temperature: 0 (32) - 70 (158) Item size: 8x2.2x0.2cm / 3.15x0.87x0.08in(L x W x H)

Capacity: 128GB Form Factor: M.2 2280 Operating Voltage: 3.3V Interface: PCIe Gen3 ( 8Gb / s ), Up to 4 Lane Storage Media: 3D MLC/TLC NAND Flash Host Memory Buffer: Support Features: NCQ/S.M.A.R.T/Wear-Leveling Operating Temperature: 0 (32) - 70 (158) Item size: 8x2.2x0.2cm / 3.15x0.87x0.08in(L x W x H)

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

 PCIe Gen 3x4 NVMe Interface.  3D TLC NAND Flash Memory.  M.2 Next Generation Form Factor [NGFF].  Available in 256GB, 512GB, 1TB, 2TB.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  SATA III 6Gb/s & SATA II 3 Gb/s.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 550MB/s, 500 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  SATA III 6Gb/s & SATA II 3 Gb/s.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 550MB/s, 500 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 2100 MB/s, 1800 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

 PCIe Gen3A-4 Interface.  M.2 2280 Form Factor.  3D TLC NAND Flash Memory.  Available in 128GB, 256GB, 512GB, 1TB.  Sequential Read, Write Speed (Up To): 2100 MB/s, 1800 MB/s.  MTBF (Mean Time between Failures): 1,500,000 hours.  Operation Temperature: 0C to 70C.

>  Raise your performance expectations >  Rest easy with solid reliability >  Available in 250 GB, 500 GB, 1 TB, 2 TB >  S.M.A.R.T. | 256-bit AES >  PCIe 3.0 x4 NVMe 1.3 Interface >  M.2 2280 Form Factor >  Up to 3200MB/s Read, 1500MB/s Write >  4K IOPS Read: 330000 | 4K IOPS Write: 300000

Available in 512GB, 1TB, 2TB PCIe 3.0 x 4 NVMe 1.3 Interface M.2 2280 Form Factor Up to 2100MB/s Read, 1700MB/s Write

Available in 512 GB, 1 TB PCIe 3 x 4 NVMe Interface M.2 2280 Form Factor 3D NAND Up to 3500MB/s Read, 2250MB/s Write

Available in 512 GB, 1 TB PCIe 3 x 4 NVMe Interface M.2 2280 Form Factor 3D NAND Up to 3500MB/s Read, 2250MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 3.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 2900MB/s Read, 1300MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Cache Memory Samsung 512MB Low Power DDR4 SDRAM Available in 250 GB, 500 GB, 1 TB, 2 TB S.M.A.R.T | 256-bit AES PCIe 4.0 x 4 NVMe 1.3c Interface M.2 2280 Form Factor V-NAND 3-bit MLC Up to 7000MB/s Read, 5000MB/s Write

Capacity: 1TB Form Factor: M.2 Compatibility: PCIe NVMe 3.0 Reading speed:3000 MB / s Recording speed:1300 MB / s

Capacity: 1TB M.2 NVMe PCIe Gen3 x 4 Interface Fast start-up, loading & file transfers. Compatible with all commonly used operating Including Windows, Linux, Dos, Unix, iOS & so on. Anti-vibration design to help prevent data loss when accidentally bumped or dropped.

Capacity: 1TB Form Factor: M.2 2280 Interface: M.2 Connections: 1 x M.2 PCIe Max Read/Write: Read: Up to 2500 MB/s, Write: Up to 2100 MB/s

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D TLC NAND Flash Memory. Available in 240GB, 480GB, 960GB, 1920GB, 4TB. Sequential Read, Write Speed (Up To): 3,100 MB/s, 1,050 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D TLC NAND Flash Memory. Available in 240GB, 480GB, 960GB, 1920GB, 4TB. Sequential Read, Write Speed (Up To): 3,100 MB/s, 1,050 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. 3D NAND Flash Memory. Available in 128GB, 256GB, 512GB, 1TB. Sequential Read, Write Speed (Up To): 1800 MB/s, 1200 MB/s MTBF (Mean Time between Failures): 1,800,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.

PCIe Gen3×4 Interface. M.2 2280 Form Factor. Available in 250GB, 500GB, 1TB. Sequential Read, Write Speed (Up To): up to 2,200/1 MB/s 000 MB/s MTBF (Mean Time between Failures): 2,000,000 hours.